Fabrication method of GaN template for high-speed chemical lift-off

In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO slower than other methods. An air tunnel structure formed using photoresist to reduce the process time and improve etchant penetration rate. Furthermore, an aluminum (AlN) sacrificial layer mounted on trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth observed AlN layer. The basic physical properties of grown are investigated x-ray diffraction, atomic force microscopy, photoluminescence measurement. with depleted by CLO, peeling rate found be 2.3–6.45 times higher that reported in literature.